Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same

ABSTRACT

A magneto-resistive memory cell and a method of forming the memory cell, includes a substrate, a single crystalline semiconductor diode formed in the substrate; and a first thin film conductor recessed in the substrate, and a second thin film conductor form above a magnetic tunnel junction formed on the diode. The diode and first thin film conductor share a non-planar common surface, such that the metal tunnel junction is a predetermined distance from the thin film conductor.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a nonvolatile memory deviceused for computer main storage, and more particularly to a nonvolatilememory array that use magnetic memory elements as the individual memorycells.

2. Description of the Related Art

Magnetic random access-memory (MRAM or typically referred to as“MagRam”) technology is a solid state tunnel junction using magneticelectrodes, and is useful as a storage mechanism. The storage mechanismrelies on the relative orientation of the magnetization of twoelectrodes, and on the ability to discern this orientation by electricalmeans.

MRAM arrays include an array of magnetic memory cells positioned at theintersections of wordlines and bitlnes.

Generally, each cell includes a magnetically changeable or “free”region, and a proximate magnetically reference region, arranged into amagnetic tunnel junction (“MTJ”) device (e.g., the term “referenceregion” is used broadly herein to denote any type of region which, incooperation with the free or changeable region, results in a detectablestate of the device as a whole).

Generally, the principle underlying storage of data in such cells is theability to change the relative orientation of the magnetization of thefree and reference regions by changing the direction of magnetizationalong the easy axis (“EA”) of the free region, and the ability tothereafter read this relative orientation difference.

More particularly, an MRAM cell is written by reversing the free regionmagnetization using applied bi-directional electrical currents andresultant magnetic stimuli via its respective bitline and wordline.

The MRAM cell is later read by measuring the resultant tunnelingresistance between the bitline and wordline, which assumes one of twovalues depending on the relative orientation of the magnetization of thefree region with respect to the reference region. If the free region ismodeled as a simple elemental magnet having a direction of magnetizationwhich is free to rotate but with a strong preference for aligning ineither direction along its easy axis (+EA or −EA), and if the referenceregion is a similar elemental magnet but having a direction ofmagnetization fixed in the +EA direction, then two states (and thereforethe two possible tunneling resistance values) are defined for the cell:aligned (+EA/+EA) and anti-aligned (−EA/+EA).

The resistance of the tunnel junction can assume one of two distinctvalues with no applied stimulus (e.g., there is a lack of sensitivity ofresistance to applied field below the easy axis flipping field strength+/−H_(c)).

For example, if the applied easy axis field exceeds +/−H_(c), then thecell is coerced into its respective high resistance (anti-alignedmagnetization of the free region with respect to the reference region)or low resistance (aligned magnetization of the free region with respectto the reference region) state.

Thus, in operation as a memory device, the MRAM device can be read bymeasuring the tunneling resistance, thereby to infer the magnetizationstate of the storage layer with respect to the fixed layer. The MRAM canbe written by reversing free layer magnetization using external magneticfields or the magnetic stimuli resulting from bitline and wordlinecurrents. If the free layer is imagined as a simple elemental magnetwhich is free to rotate but with a strong energetic preference foraligning parallel to the X axis, and if the pinned layer is a similarelemental magnet but frozen in the +X direction, then there are only twostates possible for the device (e.g., aligned and not-aligned).

The crosspoint magnetic tunnel junction (MTJ) magneto-resistive memorycell requires a diode (e.g., specifically a diode formed in a thin filmof semiconductor material or thin film diode (TFD)) in series with eachmagnetic tunnel junction (MTJ) memory element. Then, the sense currentflows through only one memory element instead of through N elements, asin conventional series architecture magneto-resistive (M-R) memories.This is advantageous in increasing the signal-to-noise ratio (SNR) by afactor of N at the same sense power (or alternatively decreasing thesense power by N squared at an equal SNR.

A key feature of the crosspoint MTJ M-R memory cell is that each memoryelement is located at the intersection of two metal thin-film wires(TFW), and the memory element electrically contacts both of the TFWs.This design feature makes possible high densityvery-large-scale-integrated (VLSI) magneto-resistive memory arrays.

The coincidence of write currents in each of the two metal TFWs causesthe free magnetic layer of the memory element to switch to a desiredstate. Switching the free magnetic layer of the selected memory elementoccurs without changing the state of the memory elements that are incontact with only one of the two TFWs. The write currents change theselected MTJ resistance state, and are on the order of milli-Amperes inboth of the two metal TFW conductors. Accordingly, the lower conductorshould be physically close to the MTJ for efficiency in generating therequired magnetic field to change the MTJ resistance state.

However, a problem is that the MTJ and the lower conductor have not beenin close proximity.

Further, since the sensing operation is a resistance measurement, anyseries resistance or low conductivity switch in series with the sensecurrent path will detract from the signal.

An alternative structure locating the diode coplanar with the siliconsubstrate has been disclosed in “Magnetic MRAM Arry With Magnetic TunnelJunction (MTJ) Cells and Remote Diodes”, U.S. patent application no.09/,116,261, invented by R.E. Scheuerlein, commonly assigned andincorporated herein by reference, which uses metal TFWs having aconventional (square or rectangular) cross-section, and uses a diodeformed in the surface of the Si wafer substrate. A vertical connectionfrom the diode up to the lower electrode of the MTJ is located besidethe lower metal conductor TFW, which causes the cell area to be largerthan a DRAM cell.

However, such a MRAM cell occupies a larger area, and achieves a lowerareal density. The uniformity of the electrical characteristics (such asthe on resistance) of the switch/diode is required for good memoryarrays. The thin film diodes (TFDs) have greater variations due to theirmanufacturing and inherent materials variations, which reduces themanufacturing yield of arrays of cells using TFD, and thereforeincreases the cost.

SUMMARY OF THE INVENTION

In view of the foregoing and other problems of the conventional systems,it is therefore an object of the present invention to provide a highconductivity diode with high rectification (I_(F)/I_(R), where I_(p) andI_(R) are respectively the diode forward and reverse bias currents).

Another object of the present invention is to provide a diode which hasa minimum total resistance.

Yet another object of the invention is to provides an MRAM cell whichoccupies a lesser area, and which achieves a higher areal density thanthe conventional cell mentioned above.

In a first aspect of the invention, a diode is located below the metalTFW, and both the diode and the recessed metal TFW share a non-planarcommon surface (e.g., also described as a surface with a verticalextent).

With this diode configuration, the MTJ can be in very close proximity tothe lower conductor. In the crosspoint MTJ memory cell the diode wasformed above the write current conductor, and could only be a thin filmdiode and thin film diodes have inferior rectification (e.g.,I_(F)/I_(R)) as compared to single crystal Si diodes. In the presentinvention, the diode is made in a single crystalline semiconductor, asshown in FIG. 1 and as described below. Additionally, in the crosspointMTJ memory, the diode has been formed above the write conductor, and theMTJ was separated from the conductor by the diode.

The present invention improves upon the MRAM cell with remote diode(which is larger than a DRAM cell) because here the diode location isautomatically self-aligned with the recessed metal line, and because thepresent cell occupies an area of approximately 1 metal pitch by 1 metalpitch. Therefore, high areal density arrays of the present structure areeasily fabricated, and the areal density may exceed that of a typicalDRAM cell.

In another aspect of the present invention, as shown for example, inFIGS. 2A-2H, a stepwise method is provided to form the above-describedstructure.

In yet another aspect, a V-groove structure is formed as shown forexample in FIGS. 4B-4C.

Hence, the present invention places the MTJ and the lower conductor inclose proximity.

In the method of the invention, one set of conductors is buried withinthe silicon and each intersection point of each buried conductor issurrounded by a layered diode so that electrical connection to the MTJis from each buried conductor and through the surrounding (e.g., buried)diode.

Further, the buried diode has more uniform electrical characteristicsthan the TFD.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects and advantages will be betterunderstood from the following detailed description of a preferredembodiment of the invention with reference to the drawings, in which:

FIG. 1A illustrates a sectional view of a memory cell according to afirst embodiment of the present invention;

FIG. 1B illustrates a schematic circuit diagram of the memory cell shownin FIG. 1A;

FIGS. 2A-2H illustrate sectional views of a stepwise process to form thestructure of FIG. 1A;

FIGS. 3A-3E illustrates a plan view of the structure at various stagesof the process shown in FIGS. 2A-2H;

FIGS. 4A-4C illustrates a combination of plan and section views of asecond, alternative embodiment of the present invention, and morespecifically a V-groove structure for an MTJ cell according to thesecond embodiment of the present invention; and

FIGS. 5A-5C illustrate a plan view and two sectional views describingthe process to make the alternative embodiment of FIGS. 4A-4C, and morespecifically a fabrication of a recessed V groove and diode in siliconwafer substrate under the MTJ.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

Referring now to the drawings, and more particularly to FIG. 1A-2H,there is shown a sectional view of the memory cell according to a firstembodiment of the present invention.

First Embodiment

In FIG. 1A, a memory structure 100, preferably formed as an MRAM, isshown according to the present invention. Structure 100 includes anupper conductor (e.g., preferably formed of a thin film wire (TFW) suchas copper which is a preferred metal material because of its lowresistance) 1 is connected to each MTJ 3. Preferably, the upperconductor has a thickness of substantially within a range of about 0.2μm to about 0.6 μm, and most preferably 0.4 μm. Preferably, the MTJ hasa thickness of substantially within a range of about 50 nm to about 300nm, and most preferably 120 nm.

The space surrounding the MTJs and between the upper conductor 1 and thesilicon substrate is filled with an interlayer dielectric 5, formedpreferably of silicon dioxide.

Each MTJ is connected to, and fabricated upon, a strap conductor 29(e.g., preferably formed of either metal or doped polysilicon) having athickness in the range of about 0.02 to 0.1 μm. The strap conductor 29is planarized by chemical mechanical polishing (CMP) to the surface of ahard mask (HM) 9, and the strap 29 makes electrical contact to a heavilydoped ntype Si region 23 at the sidewall of the trench 11. The hard mask9 is preferably formed of silicon nitride or the like.

The strap conductor 29 is located on top of a thin, deposited insulator27 (e.g., preferably formed of either deposited silicon nitride orsilicon oxide) having a thickness of substantially within a range ofabout 0.01 to about 0.1 μm. The thin insulator 27 electrically isolatesthe strap 29 from a bottom conductor 25, and hence the insulator 27 isnot part of the schematic circuit of Fig. lB. The bottom conductor maybe formed of the same material as the top conductor and morespecifically is preferably formed of copper or tungsten. The strap 29,insulator 27, and the conductor 25 are all contained in a trench 11. Thetrench 11 has a preferred dimension of F (wide) by 1.5 F (deep), where Fis the minimum feature size.

The trench 11 is etched into a p⁻silicon substrate 7, using the hardmask 9 to define the trench. An arsenic-doped SiO₂ (AD SiO₂) layer isdeposited and selectively removed using anisotropic etching. Asacrificial oxide layer 14 is deposited conformably, the wafer is heatedto out diffuse n⁺region 23 from the AD SiO₂, and then the AD SiO₂ andlayer 14 are removed leaving n⁺regions self-aligned on the trenchsidewalls 23. The trench 11 is lined by a conformal insulator 13, suchas silicon nitride or the like, which is also a reaction barrier betweenthe silicon substrate 7 (e.g., wafer) and the bottom conductor 25. Theinsulator 13 preferably has a thickness within a range of about 0.01 to0.1 μm.

At selected locations, a window 15 is etched in the conformal insulator13, exposing the silicon substrate 7 in the bottom (floor) of the trench11. The dimensions of window 15 are preferably about F×F.

Two implanted regions 17, 19 (e.g., n and p⁺, respectively, but ofcourse the conductivity types may be reversed as would be known by oneof ordinary skill in the art taldng the present specification as awhole) are located in the silicon at these selected locations, beingimplanted through the window 15.

Specifically, a relatively deep implant of n-type conductivity forms then-region 17, whereas a relatively shallow boron implant of p-typeconductivity forms the p-region 19. For example, the n-region has athickness within a range of about 0.3 μm to about 0.6 μm, whereas thep-region has a thickness withing a range of about 0.05 μm to about 0.2μm and more particularly the thickness required to avoid shorting of thebarrier layer 21 to the n-type region. The n-type region is 3 to 6 timesas deep, limited by the spacing between adjacent regions 17 whenadjacent rows are packed close together.

A relatively thin reaction barrier 21, having a preferred thickness ofabout 0.005 to about 0.02μm, electrically connects the p-region 19 tothe bottom conductor 25. Preferably, the reaction barrier is formed ofTiN, TaN or TaSiN.

FIG. 1B is a simplified electrical circuit of the memory cell of thepresent invention, showing the conductive path through the cell. Forclarity and consistency, the reference numbers shown in FIG. 1Bdesignate the same structural elements in FIG. 1A.

A process of making the memory cell according the first embodiment ofFIGS. 1A-1B is now described with reference to FIGS. 2A-2H and 3A-3E.For clarity and consistency, the same reference numerals as in FIGS.1A-1B will be used to designate the same structural elements.

FIGS. 2A-2G show sectional views at different steps m the process forproducing the structure of the first embodiment. FIGS. 3A-3E show thecorresponding plan views at some of the same steps.

As shown in FIG. 2A, in step 1, a hard mask layer 9 of Si nitride isdeposited onto a silicon substrate 7, and serves as a CMP etch stoplayer during subsequent process steps. This is an advantage of thestructure and method of this invention.

In step 2, the hard mask layer 9 is removed where row lines 1 aredesired using a mask (FIG. 3A) and a photolithography process.

Then, in step 3, using the hard mask 9, trenches of roughly a 1:1 to1.5:1 aspect ratio are etched in the Si substrate, and are lined with athin layer of As-Doped glass (ADSiO₂) 12, as shown in FIG. 2A. The ADSiO₂ glass is conformally deposited. In a modification of the firstembodiment which eliminates one lithography step, the ADSiO₂ isanistropically etched so it remains only on the sidewalls of thetrenches.

In step 4, in the preferred embodiment as shown in FIG. 3B, a lesscritical mask pattern 12A and photo lithography process are used toremove a portion of the ADSiO₂, leaving approximately a minimum featuresize ADSiO₂ region for each cell on one sidewall of the cell's row linetrench. In the above-mentioned modification of the first embodiment,both sidewalls are coated with ADSiO₂.

As further shown in FIG. 2B, a sacrificial oxide 14 (e.g., preferablySiO₂) is deposited conformally over the entire wafer. The purpose of theconformal layer is to cover the ADSiO₂, and to prevent As fromcontaminating other surfaces by vapor phase diffusion.

In step 5, solid source diffusion is performed in which heating isperformed to 1050° C. to diffuse As into wafer 7 forming regions 23(i.e., n-type regions 23). The n-type regions are self-aligned to onesidewall of the trench because the AD SiO₂ region was self alignedthere, as shown in FIG. 3C. The n-type regions may have an n-typeconcentration of approximately 10¹⁹ As/cm³. In the above-mentionedmodification of the first embodiment, the n-type regions areself-aligned to both sidewalls.

Then, the sacrificial oxide 14 and the ADSiO₂ 12A are stripped, as shownin FIG. 2C.

In step 6, the trenches are lined with a conformal oxide trench liner(COTL) 13 formed of oxide or nitride of Si or the like.

In step 7 (e.g., see FIG. 3D), which represents a critical lithographystep, windows 15 located at the intersection points of the row andcolumn lines are patterned. These regions are in the bottom surface ofthe lined trenches. Thus, the windows 15 are formed in the oxide trenchliner 13. The conformal oxide trench liner is removed in these regions,exposing the Si substrate 7, as shown in FIG. 2D.

In step 8, deep n-type regions 17 (e.g., typically having a depth ofbetween 0.3 μm to 0.6 μm) are implanted in the silicon substrate 7 atthe windows 15. The n-dopant is activated at high temperature (1000° C.to 1100° C. and typically 1050° C.), and shallow (localized) p-typeregions 19 are implanted in the silicon substrate 7 (e.g., preferably ashallow boron implant) at the windows 15.

A barrier 21 preferably formed by depositing Ti/TiN or other silicidecontact forming metals is deposited and heated to form a TiSi₂/TiNbarrier, and thereafter the boron is activated. This represents the endof high temperature processes in the method of the first embodiment ofthe present invention.

In step 9, the trenches are filled with a row line conductor metal 25 a.Preferably, the row conductor metal is tungsten because it is arefractory metal unaffected by the temperature of the remainingprocesses. Copper could also be used because of its advantage of lowerresistance, but careful control of the temperature of the remainingprocess steps would be required to preserve the copper line. The rowline conductor metal 25 a is planarized by CMP to the hard mask 9, asshown in FIG. 2E.

In step 10, the metal 25 a in the trenches is recessed to a depthsubstantially within a range of approximately 0.15 to 0.45 μm byselective reactive ion etching (RIE) or the like. The remaining metalconductor 25 represents the row line. The remaining metal isapproximately 0.4×0.4 μm or less and has an approximately squarecross-section.

In step 11, the upper regions of the trenches are filled with a lowtemperature (e.g., in a range of approximately 400° C. to 700° C.) oxide27, such as deposited silicon dioxide, and the oxide is planarized byCMP to the hard mask 9, as shown in FIG. 2F.

The structure is now complete to FIG. 2F.

A process of forming the conducting strap regions now will be described,referring to FIGS. 2G-2H, for the preferred embodiment.

In step 12, lithography is used to define the recessed location 29A ofthe strap 29, one per cell along the length of the row line. This maskis used to remove a portion of layers 27 and 13 by reactive ion etching(RIE) with high selectivity for oxide over silicon to etch both the lowtemperature oxide 27 and the conformal oxide trench liner 13 on one sideonly of the trench, thereby forming recessed regions in the oxide 29A.It is noted that the conformal oxide trench liner 13 is removed on onesidewall of the trench 11 at arrow B, and left intact on the oppositesidewall, as shown in FIG. 2G at arrow A. This is a “self-aligning”feature of the present invention and provides many advantages andbenefits. As seen in FIG. 3E in plan view, the recessed region islocated at the same location as the window 15, as shown in FIG. 2D andplan view 3D, so the strap will contact the region 23 which contactsregions 17, 19 formed at window 15. In a modification to the firstembodiment, not shown, this is done on both sides of the trench.

Thereafter, in step 13 a metal or doped Poly-Si is deposited to fill therecessed regions, thereby forming the “strap” 29. The strap makes ohmiccontact 30 to the n-type regions on the sidewall of the recessedregions. The strap material fills cracks and irregularities.

In the modification to the first embodiment, not shown, the strap makesohmic contact to two n-type regions on both sides of the trench. In themodification of the first embodiment, the diode has lower contactresistance.

In step 14, the strap material is planarized by CMP to the surface ofthe hard mask 9, as shown in FIG. 2H.

After step 14, the magnetic tunnel junction (MTJ) is formed andpatterned, the inter-layer dielectric (ILD) is deposited, and the columnlines are formed, to complete the memory cell structure.

FIGS. 3A-3E illustrate plan views of the structure being formed in FIGS.1A-1B, and specifically plan views of some of the steps shown in FIGS.2A-2H.

Specifically, FIG. 3A illustrates the structure formed in FIG. 2A beforedeposition of As-doped SiO₂, whereas FIG. 3B illustrates a plan view ofthe structure formed at the completion of step 2B.

Further, FIG. 3C is a plan view of the n-type As-diffused regions afterthe solid source diffusion has been performed (FIG. 2C), and FIG. 3Dillustrates a plan view of the step of FIG. 2D at the conclusion of thedeep n and shallow p⁺boron implantation but before boron diffusion.Further, FIG. 3E is the plan view after etching oxide 27 and correspondsto step 12 shown in the cross-section of FIG. 2G.

In the modification of the first embodiment, the ADSiO₂ is left on bothsides of the trench, in step 4, and the location of the strap extendsacross the trench width in step 12 so COTL is removed at both locationsA and B in FIG. 2G. In this way, the strap is larger and contacts thediode at two locations and the MTJ over a larger area.

Thus, the first embodiment according to the present invention provides anovel structure and method for forming the structure in which a magneticmemory cell structure contains a magnetic tunnel junction (MTJ) and adiode in series.

As shown, both the MTJ and the diode are in close proximity to a metalthin film wire (TFW), the TFW being used for conducting the writecurrent which changes the MTJ resistance sate, and for addressing thememory cell.

With the invention according to the first embodiment, the diode is madein the crystal silicon substrate under the metal TFW (e.g., the TFWcontacting one terminal of the diode), and the TFW being the row lineand recessed in a trench in the silicon wafer substrate. Above the TFWelectrode are located a thin insulator layer and the MTJ, respectively.The thickness of the insulator and strap thus defines the distancebetween the TFW and the MTJ.

In the first embodiment, the bottom metal conductor has a conventionalcross-section, is located in a trench, and dry etching processes areused to make the recessed trench regions in the Si substrate.

Hence, the first embodiment provides a structure including a highconductivity diode with high rectification and minimal resistance.

Second Embodiment

A second embodiment according to the present invention is describedbelow with reference to FIGS. 4A-4C.

FIGS. 4A-4C show the second embodiment of the present invention whereinthe diode is self-aligned to recessed regions denoted as V-grooves 414,and electrical connection to the bottom electrode of the diode (n region415) is also self-aligned. An anisotropic wet etch or the like is usedto make the recessed V-groove region in the silicon substrate. Materialsand dimensions substantially similar to those described above can beemployed, absent an indication to the contrary in the description below.

FIG. 4A is the plan view (top view) showing a bottom metal conductor(TFW) 425 drawn vertically, and three diodes formed at three recessedV-groove regions 414, respectively. In FIG. 4A, the three top metalconductors and the three MTJs are not shown, for clarity. It is notedthat in FIG. 4A, the lines for V-grooves 414 are approximately 55°diagonals, but generally do not meet in the center because typically theheight of V-groove 414 is greater than the width of the groove 414.

FIG. 4B is a sectional view through plane A—A of FIG. 4A. Plane A—Abecomes the center line of the top metal conductor in the completedmemory array. The MTJ and then the top metal conductor are formed aboveV-groove 414 and extend to the left and right where there would beadditional memory cells.

FIG. 4C is a sectional view through plane B—B. Plane B—B is the centerline of the bottom metal conductor 425.

Referring to FIG. 4A, in the method of forming the V-groove structurefor the MTJ cell structure (e.g., assuming a P-N diode as an exemplarycase), first shallow trench isolation (STI) trench regions 411 areformed so as to enclose regions 410 where the original silicon surfaceremains, as shown. Then, n+ silicon regions are formed by implanting thesurface of the silicon substrate 100 (e.g., approximately 0.1 μm to 0.3μm deep in the exemplary embodiment and preferably 0.2 μm). Next, amasking layer is formed with long, narrow holes (trenches) correspondingto bottom metal conductor 425.

Thereafter, portions of the STI oxide isolation 411 are recessed belowthe substrate surface, forming recessed regions 412 (seen in plan viewin FIG. 4A) above the remaining oxide isolation 41 1A, as shown incrosssectional view of FIG. 4C.

Thereafter, a V-groove is formed self-limited to the region 414 as shownin FIGS. 4A-4C. The V-groove is limited by recessed oxide isolation411A, and stops at the edge of the masking layer defined by rectangle425 which was defined by a photolithography step with a photoresist maskor the like. At the STI border, etching proceeds partially from the sidebut forms a clean groove at completion. After the V-groove etch, then⁺silicon regions 410 are reduced to regions 413.

Thereafter, deep n implants 415 are formed for the diode in the groove,and thereafter shallow p⁺implants 416 for the diode are formed. Thelocation of the p⁺implant 416 is controlled by a patterned photoresistso the p implant region does not reach the top of the V-groove andremains separated from the MTJ, as shown in FIG. 4B. Obviously, theconductivities may be reversed as would be known by one of ordinaryskill in the art. Then, a metallic conductor is formed, by depositing athin barrier layer TiN or the like and a metal (e.g., tungsten orcopper) in the V-groove and polishing off the metal to the originalsubstrate surface. Then, the metal is recessed by uniform etching belowthe STI surface about 0.2 μm forming recessed lines and the bottom metalconductor defined by the 425 rectangle.

Then, as shown in FIG. 4C, silicon diode layer 430 is deposited andplanarized by CMP or the like to the substrate surface, so as shown inFIG. 4C, the diode is self-aligned with the STI 411.

Regarding the details of the contact region of the second embodiment,the n⁺ surface region 413 is shallower (thinner) than the recessedinsulator 430, so the converted p region is also shallower than therecessed insulator 430. Bottom conductor 425 only contacts the p region(see FIG. 4B), so there is no direct contact between the n⁺surfaceregion and the bottom conductor 425.

Also note in FIG. 4B that the MTJ only contacts the n+ surface region413 because of insulator 430, and does not contact bottom conductor 425.The size of region 413 can be less than 0.5 F, even with misregistrationof conductor 425 and n⁺silicon region 410, at least one portion ofn⁺surface regions 413 will be wide enough to contact the MTJ. In orderto produce the densest memories, the rectangle 410 could be smaller son⁺regions 413 on the lefthand side would not be formed in processing.This would produce a smaller cell, but has higher diode contactresistance.

Third Embodiment

FIGS. 5A-5C show the third embodiment of the present invention whereinthe diode is self-aligned to recessed regions denoted as an etchedrecess in silicon 6 and the recess for the diode has a top portion withstraight walls and a sloped portion below so the p region, which is onthe sloped portion, is below the substrate surface.

FIG. 5A is a plan view showing a bottom metal conductor 525, drawnvertically, and two diodes 4 formed at two recessed regions 6. The twotop metal conductors and the two MTJs are not shown, for clarity andease of understanding. Similarly to FIG. 4A, STI 511 is formed outsiderectangles 510, and is recessed at regions 511A.

FIG. 5B is a sectional view through plane A—A. Plane A—A becomes thecenter line of the top metal conductor in the completed memory array.The MTJ and the top metal conductor (not shown) in turn are formed abovethe structure shown. The V-groove is recessed to near the bottom of then region 513, with substantially vertical walls in the siliconsubstrate, and sloped walls below region 513, so that the diode 514 withp and n layers shown are also recessed. The diode's p layer has noelectrical contact with the n region 513 which then can have a surfacedoping level of several times 10¹⁹/cm³. Oxide isolation layer 530 isthicker than n region 513 to prevent a connection between n layer 513and either bottom conductor 525 or the p layer. FIG. 5C is a sectionalview through plane B—B. Plane B—B is the center line of the bottom metalconductor 525, which fills the space above recessed insulator 511A andinsulator 530.

Fabrication of the third embodiment is similar to the second embodiment,but with changes to produce the structural differences.

As in the second embodiment, rectangle 510 can be smaller, forming asingle n region 513 and thereby a smaller cell.

Thus, with the present invention, a MRAM is produced in which the MTJ isin very close proximity to the lower conductor and single crystal Sidiodes can be employed.

The present invention improves over the conventional arrangementsbecause here the diode is made in a single crystalline semiconductor,and further the diode location is automatically self-aligned with therecessed metal line. Additionally, the present cell can occupy an areaof approximately 1 metal pitch by 1 metal pitch. Therefore, high arealdensity arrays of the present structure are easily fabricated, and theareal density may exceed that of a typical DRAM cell.

While the invention has been described in terms of several preferredembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims.

Having thus described our invention, what we claim as new and desire tosecure by Letters Patent is as follows:
 1. A magneto-resistive memorycell, comprising: a substrate; a single crystalline semiconductor diodeformed in said substrate; a first thin film conductor recessed in saidsubstrate; a magnetic tunnel junction formed above said first conductor;and a second thin film conductor formed above said magnetic tunneljunction, wherein said diode and said first thin film conductor share anon-planar common surface, such that said magnetic tunnel junction is apredetermined distance from said thin film conductor.
 2. A nonvolatilememory cell structure, comprising: a silicon substrate; a diode formedin said substrate; a first conductor located above said diode, andrecessed in a trench formed in said substrate; an insulator layerlocated above said first conductor; a magnetic tunnel junction locatedabove said insulator layer; and a second conductor located above saidmagnetic tunnel junction.
 3. The memory cell structure according toclaim 2, wherein said first and second conductors comprise first andsecond thin film wires, respectively.
 4. The memory cell according toclaim 2, wherein an upper surface of said insulator layer comprises aplanarized layer and is coplanar with a top surface of said siliconsubstrate.
 5. A memory, comprising: a magnetic tunnel junction; a diodecoupled to said magnetic tunnel junction and including first and secondcontacts; and a metallic conductor coupled to said diode, wherein anon-planar surface is shared by the metal conductor and a contact ofsaid diode.
 6. The memory according to claim 5, wherein the non-planarsurface is one of recessed below and raised above a surface of thesilicon substrate.
 7. The memory according to claim 5, wherein saidnon-planar surface comprises a surface with a vertical extent.
 8. Thememory according to claim 5, wherein a plurality of diodes are connectedto a plurality of magnetic tunnel junctions and said metallic conductor.9. The memory according to claim 8, wherein said non-planar surfacecomprises a surface with a vertical extent shared by the metal conductorand a contact of each of said diodes.
 10. A memory, comprising: amagnetic tunnel junction; a diode coupled to said magnetic tunneljunction and including first and second contacts; and a metallicconductor coupled to said diode, wherein a non-planar surface is sharedby the metal conductor and a contact of said diode and, wherein theshared surface includes a sloped surface and is recessed below thesurface of a silicon wafer substrate.
 11. The memory according to claim10, wherein said sloped surface is sloped at an angle substantiallybetween approximately 53 and approximately 57 degrees.
 12. The memoryaccording to claim 11, wherein said sloped surface is sloped at an angleof substantially 55 degrees.
 13. The memory according to claim 5,wherein the shared surface is the vertical edge of said metal conductor.14. The memory according to claim 13, wherein said conductor comprises apatterned metallic conductor.
 15. The memory according to claim 5,wherein the shared surface comprises a vertical edge etched into saidsilicon substrate.
 16. The memory according to claim 5, wherein theshared surface comprises a vertical edge recessed into said siliconsubstrate.
 17. A nonvolatile memory cell structure, comprising: acrystal silicon wafer substrate; an ion-implanted diode formed in saidsubstrate; a first thin film wire located above said diode, and recessedin a trench in said substrate; an insulator layer located above saidfirst thin film wire; a magnetic tunnel junction located above saidinsulator layer; and a second thin film wire located above said magnetictunnel junction.
 18. The memory cell according to claim 17, wherein anupper surface of said insulator layer comprises a planarized layer andis coplanar with a top surface of said silicon substrate.
 19. The memorycell according to claim 18, wherein said planarized layer comprises achemical mechanical polish (CMP) planarized layer.
 20. A magnetic memorycell, comprising: a magnetic tunnel junction; a semiconductor singlecrystal silicon diode coupled to said magnetic tunnel junction inseries; and a metal thin film wire, positioned a predetermined distancefrom said magnetic tunnel junction for conducting a write current whichchanges the magnetic tunnel junction resistance state, and addressingthe memory cell.
 21. The memory cell according to claim 20, wherein saiddiode is made in a crystal silicon substrate under the metal thin filmwire, said metal thin film being an electrode of said diode, and being aconductor recessed in a trench in the silicon substrate, wherein, abovethe thin film wire, are located a thin insulator layer and the MTJ,respectively, a thickness of the insulator defining the predetermineddistance between the thin film wire and said magnetic tunnel junction.22. The memory cell according to claim 21, wherein said conductorcomprises a metal conductor, said trench being formed by a dry etchingprocess in the silicon substrate.
 23. The memory cell according to claim22, wherein in a contact region, an n⁺surface region is shallower tanmthe insulator, such that there is no direct contact between then⁺surface region and the metal conductor.
 24. The memory cell accordingto claim 20, wherein said predetermined distance is less than 0.04 μm.